Samsung to ship Industry’s first ‘Multi-Chip Package with phase-change’ for use in mobiles.

PRAM, which stores data via the phase change characteristics of its base material, an alloy of germanium, antimony and titanium, provides three-times faster data storage performance per word than NOR chips.

The products are 128-Mbit capacity devices made using a 90-nm process technology that offer up to “300 times faster write speeds and ten times more write endurance than today’s flash memory,” the company said in a statement.

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